2SB1403 silicon pnp triple diffused application low frequency power amplifier outline 3.0 k w (typ) 180 w (typ) 1 2 3 i d 1 2 3 1. base 2. collector 3. emitter to-220fm
2SB1403 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit collector to base voltage v cbo C120 v collector to emitter voltage v ceo C120 v emitter to base voltage v ebo C7 v collector current i c C6 a collector peak current i c(peak) C12 a collector power dissipation p c 2w p c * 1 25 junction temperature tj 150 c storage temperature tstg C55 to +150 c c to e diode forward current i d * 1 6a note: 1. value at t c = 25 c. electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo C120 v i c = C0.1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo C120 v i c = C25 ma, r be = emitter to base breakdown voltage v (br)ebo C7 v i e = C50 ma, i c = 0 collector cutoff current i cbo C10 m av cb = C100 v, i e = 0 i ceo C10 v ce = C100 v, r be = dc current transfer ratio h fe 1000 20000 v ce = C3 v, i c = C3 a* 1 collector to emitter saturation voltage v ce(sat)1 C1.5 v i c = C3 a, i b = C6 ma* 1 v ce(sat)2 C3.0 i c = C6 a, i b = C60 ma* 1 base to emitter saturation voltage v be(sat)1 C2.0 v i c = C3 a, i b = C6 ma* 1 v be(sat)2 C3.5 i c = C6 a, i b = C60 ma* 1 c to e diode forward voltage v d 3.0 v i d = 6 a* 1 note: 1. pulse test. see switching characteristic curve of 2sb1106.
2SB1403 3 maximum collector dissipation curve 30 20 10 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) ?0 ?0 ? ? ?.0 ?.5 ?.2 ?.1 ?.05 ?.02 collector current i c (a) ?0 ?00 ? ?0 ?00 collector to emitter voltage v ce (v) ta = 25 c
1 shot pulse i c(peak) 1 m s i c(max) dc operation(t c = 25 c) pw = 10 ms 1 ms 100 m s area of safe operation i b = 0 p c = 25 w ?.5 ma ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 ?.0 ?0 ? ? ? ? 0 1 collector current i c (a) ? collector to emitter voltage v ce (v) ? ? ? typical output characteristics 10000 3000 1000 300 100 ?.1 ?.3 dc current transfer ratio h fe ?.0 collector current i c (a) ? ?0 ta = 75 c ?5 c 25 c v ce = ? v dc current transfer ratio vs.
collector current
2SB1403 4 saturation voltage vs.
collector current t c = 25 c ?0 ? ?.0 ?.3 collector to emitter saturation voltage v ce(sat) (v)
base to emitter sauration voltage v be(sat) (v) ?.1 ?.1 ?.3 collector current i c (a) ? ?.0 ?0 v be(sat) v ce(sat) i c / i b = 200 500 200 transient thermal resistance t c = 25 c time t (s) 10 3 1.0 0.3 0.1 thermal resistance q j-c ( c/w) 1 m 10 m 100 m 1.0 10 100 1000
2SB1403 5 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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